Technical engineering comparison between Tantalum Carbide (TaC) and Silicon Carbide (SiC) CVD coatings on high-purity isostatic graphite susceptors, crucibles, and heating elements for Physical Vapor Transport (PVT) crystal growth. TaC coatings withstand harsh silicon vapor environments and extreme temperatures up to 2200°C, suppressing graphite erosion, preventing carbon particle release, and significantly extending component service life in silicon carbide ingot production.